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GT20N135SRA - Silicon N-Channel IGBT

Key Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ. ) (IC = 40 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 20 A, Ta = 25 ) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-247 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-10.

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Discrete IGBTs Silicon N-Channel IGBT GT20N135SRA GT20N135SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedicated to Soft Switching Applications • Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 40 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 20 A, Ta = 25 ) (6) High junction temperature: Tj = 175  (max) 3.