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GT20J341 Datasheet Silicon N-channel IGBT

Manufacturer: Toshiba

Overview: GT20J341 Discrete IGBTs Silicon N-Channel IGBT GT20J341 1. Applications • Motor Drivers 2.

Key Features

  • (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet http://www. datasheet4u. com/ GT20J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed) Dio.

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