Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Dedicated to Photo-Flash Intensity Control Applications
- Dedicated to High-Speed-Switching Photo Flash Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package
3. Packaging and Internal Circuit
SOP-8
1,2,3: Emitter 4: Gate 5,6,7,8: Collector
Start of mercial production
2012-07
2014-01-07
Rev.2.0
4....