HN4K03JU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Unit: mm z High input impedance z Low gate threshold voltage: Vth = 0.5 to 1.5V z Excellent switching times z Small package Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage DC Drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD- Tch Tstg 100 m A 200 m W °C - 55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-2L1B Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Total rating Start of mercial production 1997-02 2014-03-01 Electrical Characteristics (Ta = 25°C) (Q1, Q2 mon) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input...