J681 Datasheet | Toshiba

.. .DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U- MOSIII) 2SJ681 Relay Drive, DC- DC Converter and Motor Drive Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = - 100 µA (max) (VDS = - 60 V) z Enhancement mode: Vth = - 0.8 to - 2.0 V (VDS = - 10 V, ID = - 1 mA) １．６ z Low drain- source ON resistance: RDS (ON) = 0.12 Ω (typ.) ０．９ ５．５±０．２ z 4-V gate drive １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ １ ２ ３ Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source...