S1375 - NPN Transistor

Features

. Complementary to S1376 Unit in mm &.
. .9.9MAX. 03.2±Oig , '" %. ,.
3. n II.

Toshiba

Datasheet Details

Part number	S1375
Manufacturer	Toshiba
File Size	80.71 KB
Description	NPN Transistor
Datasheet	S1375 Datasheet
Additional preview pages of the S1375 datasheet.

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Full PDF Text Transcription

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S1375 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . Complementary to S1376 Unit in mm &—..9.9MAX. 03.2±Oig , '" %. ,* 3. n II MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO v EBO ic IB PC T J T stg RATING 80 80 5 750 500 1.5 150 -55-150 UNIT V V V mA mA W °C °C I 1 2 Z 9.9 MAX. 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK? TOSHIBA Weight : 1.

Published: Jul 16, 2018 |