S1375
S1375 is NPN Transistor manufactured by Toshiba.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS.
Features
. plementary to S1376
Unit in mm
&- ..9.9MAX. 03.2±Oig ,
'" %. ,-
3. n
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VcBO v CEO v EBO ic
IB PC T
T stg
RATING 80 80
750 500 1.5 150
-55-150
UNIT V V V mA mA
W °C °C
I 1 2 Z
9.9 MAX.
1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK?
TOSHIBA Weight : 1.4g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST...
