S1377 - NPN Transistor

Features

. High Collector to Emitter Breakdown Voltage V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI 0.66.

Toshiba

Datasheet Details

Part number	S1377
Manufacturer	Toshiba
File Size	89.50 KB
Description	NPN Transistor
Datasheet	S1377 Datasheet
Additional preview pages of the S1377 datasheet.

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Full PDF Text Transcription

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S1377 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. TV HORIZONTAL DRIVER APPLICATIONS. FEATURES . High Collector to Emitter Breakdown Voltage V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI 0.66 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL V CBO v CEO v EBO ic IB PC T i T stg RATING 250 250 6 500 250 1.5 6.25 150 -55-150 2.54 C1.6 UNIT V V V mA mA W °c °c Tt;r : ; 9. 9 MAX. 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) JEDEC EIA J TOSHIBA 2-10Dli Weight : 1.

Published: Jul 16, 2018 |