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S1377
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. TV HORIZONTAL DRIVER APPLICATIONS.
FEATURES . High Collector to Emitter Breakdown Voltage
V CEO=250V
Unit in mm
9.9MAX. 03.2+0.2
i?
n.
1.2 TTTI
0.66
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL V CBO v CEO v EBO
ic IB
PC
T i
T stg
RATING 250 250
6
500 250 1.5 6.25 150
-55-150
2.54
C1.6
UNIT V V V
mA mA
W
°c °c
Tt;r : ;
9. 9 MAX.
1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK)
JEDEC
EIA J TOSHIBA
2-10Dli
Weight : 1.