S1376
S1376 is NPN Transistor manufactured by Toshiba.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS,
Features
. plementary to S1375
Unit in mm
9.9MAX. 03.2±O.2
W- -$ a. m
0.6 6
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C TJ T stg
RATING -80 -80 -5
-750 -500
1.5 150 -55-150
UNIT V V V m A m A
W °C °C
Tr-rp;
4-
',3-
,9, 9 MAX.
1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK)
JEDEC
TOSHIBA Weight : 1.4g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown...
