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S1376
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS,
FEATURES . Complementary to S1375
Unit in mm
9.9MAX. 03.2±O.2
W- -$
a.
m
0.6 6
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C TJ T stg
RATING -80 -80 -5
-750 -500
1.5 150 -55-150
UNIT V V V
mA mA
W °C °C
Tr-rp;
4*
',3-
,9, 9 MAX.
1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK)
JEDEC
TOSHIBA Weight : 1.
S1376 Datasheet
