S1376 - NPN Transistor

Features

. Complementary to S1375 Unit in mm 9.9MAX. 03.2±O.2 W- -$ a. m 0.6 6.

Toshiba

Datasheet Details

Part number	S1376
Manufacturer	Toshiba
File Size	77.73 KB
Description	NPN Transistor
Datasheet	S1376 Datasheet
Additional preview pages of the S1376 datasheet.

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Full PDF Text Transcription

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S1376 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS, FEATURES . Complementary to S1375 Unit in mm 9.9MAX. 03.2±O.2 W- -$ a. m 0.6 6 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C TJ T stg RATING -80 -80 -5 -750 -500 1.5 150 -55-150 UNIT V V V mA mA W °C °C Tr-rp; 4* ',3- ,9, 9 MAX. 1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK) JEDEC TOSHIBA Weight : 1.

Published: Jul 16, 2018 |