SSM3J340R
SSM3J340R is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) 4.0-V drive (2) Low drain-source on-resistance
: RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-03
2019-05-17 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -30 V
Gate-source voltage
VGSS
-25 / +20
Drain current (DC)
(Note 1)
-4 A
Drain current (pulsed)
(Note 1), (Note 2)
-12
Power dissipation
(Note 3)
1W
Power dissipation t ≤ 10 s
(Note 3)
Channel temperature
Tch 150
Storage temperature
Tstg -55 to...
