SSM3J65CTC Datasheet | Toshiba

Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 510 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 400 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment CST3C ©2017-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2017-09 2021-03-11 Rev.4.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 VGSS ±10 Drain current (DC) (Note 1) -700 m A Drain current (pulsed) (Note 1) -1400 Power dissipation Channel temperature (Note 2) Tch 500 m W - Storage temperature Tstg -55 to...