SSM3J66MFV Datasheet | Toshiba

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J66MFV,L3XHF - YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2017-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-02 2021-09-28 Rev.3.0 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 Gate-source voltage VGSS -8/+6 Drain current (DC) (Note...