Datasheet4U Logo Datasheet4U.com

SSM3J66MFV - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration SSM3J66MFV 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J.

📥 Download Datasheet

Datasheet Details

Part number SSM3J66MFV
Manufacturer Toshiba
File Size 282.77 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J66MFV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSM3J01F Silicon P-Channel MOSFET Toshiba Semiconductor
SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Toshiba Semiconductor
SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Toshiba Semiconductor
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Toshiba Semiconductor
SSM3J05FU Power Management Switch High Speed Switching Applications Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
SSM3J64CTC Silicon P-Channel MOSFET
SSM3J65CTC Silicon P-Channel MOSFET
SSM3J130TU Silicon P-Channel MOSFET
SSM3J133TU Silicon P-Channel MOSFET
SSM3J134TU Silicon P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J66MFV 1. Applications • Load Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration SSM3J66MFV 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J66MFV,L3XHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.