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TBC550 - Silicon NPN Transistor

Download the TBC550 datasheet PDF. This datasheet also covers the TBC549 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBC549-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBC550
Manufacturer Toshiba
File Size 52.35 KB
Description Silicon NPN Transistor
Datasheet download datasheet TBC550 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TBC556 Silicon PNP Transistor
TBC557 Silicon PNP Transistor
TBC558 Silicon PNP Transistor
TBC559 Silicon PNP Transistor
TBC546 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakdown Voltage TBC549 v (BR)CEO TBC550 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC Peak Base Current (Peak) Collector Power Dissipation Junction Temperature Storage Temperature Range ic ICP IBP Ti L stg RATING 30 50 30 45 UNIT 100 mA 200 200 mA 500 mW 150 -65-150 1. COLLECTOR 2. BASE 3. EMITTER Weight : 0.