Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
Features
. Low Noise : 4dB Max. (TBC549)
3dB Max. (TBC550) . High V CE o : 30V (TBC549)
45V (TBC550)
. High hpE : 200 ~800
5MAX. jiil
TBC549 TBC550
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC549 V(BR)CBO
Collector-Emitter Breakdown Voltage
TBC549 v (BR)CEO
Emitter-Base Breakdown Voltage v (BR)EBO
Collector Current
DC Peak
Base Current (Peak)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range ic ICP IBP
Ti
L stg
RATING 30 50 30 45
UNIT
100...