TBC550 Overview
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
TBC550 Key Features
- 65-150
- 2mA Rg=2kn, f=lkHz
- MAX. 15
- UNIT nA
- 3.5 4.5
- 0.135 tiM
TBC550 Datasheet
| Part number | TBC550 |
|---|---|
| Datasheet | TBC550 / TBC549 Datasheet (PDF) |
| File Size | 52.35 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Transistor |
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