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TBC557 - Silicon PNP Transistor

Download the TBC557 datasheet PDF. This datasheet also covers the TBC556 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBC556-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBC557
Manufacturer Toshiba
File Size 50.94 KB
Description Silicon PNP Transistor
Datasheet download datasheet TBC557 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TBC550 Silicon NPN Transistor
TBC556 Silicon PNP Transistor
TBC558 Silicon PNP Transistor
TBC559 Silicon PNP Transistor
TBC546 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0 RATING -80 -50 -30 -65 -45 -30 UNIT 1. COLLECTOR 2. BASE 3. EMITTER TOSHIBA 2-5P1Q Weight : 0.