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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
0.45
11
1.27
1.27
H^fj/ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0
RATING -80
-50
-30 -65
-45
-30
UNIT
1. COLLECTOR 2. BASE 3. EMITTER
TOSHIBA
2-5P1Q
Weight : 0.
TBC556 Datasheet
