TC551402J-30 - CMOS SRAM

This page provides the datasheet information for the TC551402J-30, a member of the TC551402J-20 CMOS SRAM family.

Product Overview

Toshiba

Datasheet Details

Part number	TC551402J-30
Manufacturer	Toshiba
File Size	199.95 KB
Description	CMOS SRAM
Datasheet	TC551402J-30 Datasheet
Additional preview pages of the TC551402J-30 datasheet.

TC551402J-30 Product details

Description

The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device.

The mode (x1/x4) is selected by the input level of pin 17 (81/84).

Features

low power dissipation when the SRAM is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. It is suitable for use in high speed.

📁 Similar Datasheet

TC551402J-22 - (TC551402J-22/-25) CMOS STATIC RAM (Toshiba Semiconductor)
TC551402J-25 - (TC551402J-22/-25) CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BFL-70L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BFL-85L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BFTL-70L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BFTL-85L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BPL-70L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BPL-85L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BTRL-70L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)
TC551001BTRL-85L - SILICON GATE CMOS STATIC RAM (Toshiba Semiconductor)

Other Datasheets by Toshiba

TC551402J-20 - CMOS SRAM
TC5514AP - (TC5514P/AP/APL) 1024 x 4-Bit CMOS Static RAM
TC5514APL - (TC5514P/AP/APL) 1024 x 4-Bit CMOS Static RAM
TC5514P - (TC5514P/AP/APL) 1024 x 4-Bit CMOS Static RAM
TC551001AFI-10 - SILICON GATE CMOS STATIC RAM
TC551001AFI-10L - SILICON GATE CMOS STATIC RAM
TC551001AFI-85 - SILICON GATE CMOS STATIC RAM
TC551001AFI-85L - SILICON GATE CMOS STATIC RAM

Published: Feb 18, 2017 |