TC58NVG2D4BFT00
TC58NVG2D4BFT00 is 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TOSHIBA CONFIDENTIAL
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E PROM (Multi Level Cell) DESCRIPTION
The TC58NVG2D4B is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 2048 blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 2112 bytes × 128 pages). The TC58NVG2D4B is a serial-type memory device...
