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TC58NVG2S3ETAI0 Datasheet

Manufacturer: Toshiba
TC58NVG2S3ETAI0 datasheet preview

TC58NVG2S3ETAI0 Details

Part number TC58NVG2S3ETAI0
Datasheet TC58NVG2S3ETAI0-Toshiba.pdf
File Size 488.70 KB
Manufacturer Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S3ETAI0 page 2 TC58NVG2S3ETAI0 page 3

TC58NVG2S3ETAI0 Overview

The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG2S3ETAI0 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
  • Mode control Serial input/output
  • Number of valid blocks Min 4016 blocks Max 4096 blocks
  • Power supply VCC = 2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle) Program (avg.)
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

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