TC58NVG2S3ETAI0
Description
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.
Key Features
- Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
- Number of valid blocks Min 4016 blocks Max 4096 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF)
- Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 2.5 ms/block typ
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
