| Part number | TC58NVG2S3EBAI5 |
|---|---|
| Datasheet | TC58NVG2S3EBAI5-Toshiba.pdf |
| File Size | 651.96 KB |
| Manufacturer | Toshiba |
| Description | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
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The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes 4 Kbytes: The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
| Part Number | Description |
|---|---|
| TC58NVG2S3ETA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S3ETAI0 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG2S0FTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0FTAI0 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HBAI6 | 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HTAI0 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2D4BFT00 | 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM |
