Datasheet4U Logo Datasheet4U.com

TC58NVG2S3EBAI5 - 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

General Description

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks.

📥 Download Datasheet

Datasheet Details

Part number TC58NVG2S3EBAI5
Manufacturer Toshiba
File Size 651.96 KB
Description 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Datasheet download datasheet TC58NVG2S3EBAI5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM Toshiba Semiconductor
TC581282AXB 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM Toshiba Semiconductor
TC58128FT 128M-Bit CMOS NAND EPROM Toshiba Semiconductor
TC58128FTI 128M-Bit CMOS NAND EPROM Toshiba Semiconductor
TC5816BDC 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC58NVG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S3ETAI0 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
TC58NVG2S0FTA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0FTAI0 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  4 Kbytes: 2112 bytes  64 pages). The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.