Datasheet Details
| Part number | TC59SM804CFT |
|---|---|
| Manufacturer | Toshiba |
| File Size | 2.78 MB |
| Description | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| Datasheet |
 TC59SM804CFT Datasheet
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Download the TC59SM804CFT datasheet PDF. This datasheet also includes the TC59SM816CFT variant, as both parts are published together in a single manufacturer document.
| Part number | TC59SM804CFT |
|---|---|
| Manufacturer | Toshiba |
| File Size | 2.78 MB |
| Description | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| Datasheet |
TC59SM804CFT Datasheet
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TC59SM816CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CFT/CFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CFT/CFTL is organized as 16,777,216 words × 4 banks × 4 bits.
Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second.
These devices are controlled by commands setting.
www.DataSheet4U.com TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS.
| Part Number | Description |
|---|---|
| TC59SM804CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM804CMB | (TC59SM804CMB - TC59SM816CMB) SDRAM |
| TC59SM804CMBL | (TC59SM804CMB - TC59SM816CMB) SDRAM |
| TC59SM804BFT | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM804BFTL | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM808BFT | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM808BFTL | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM808CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM808CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM808CMB | (TC59SM804CMB - TC59SM816CMB) SDRAM |