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TC74VHC10F - Triple 3-Input NAND Gate

Features

  • High speed: tpd = 3.9 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Power down protection is provided on all inputs.
  • Balanced propagation delays: tpLH ∼.
  • tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 5.5 V.
  • Pin and function compatible with 74ALS10 TC74VHC10F TC74VHC10FT Weight SOP14-P-300-1.27A TSSOP14-P-0044-0.65A : 0.18 g (typ. ) :.

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Datasheet Details

Part number TC74VHC10F
Manufacturer Toshiba
File Size 209.61 KB
Description Triple 3-Input NAND Gate
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TC74VHC10F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC10F, TC74VHC10FT Triple 3-Input NAND Gate The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
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