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TIM1112-15L - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM1112-15L
Manufacturer Toshiba
File Size 400.66 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1112-15L Datasheet
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-15L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.0A f = 11.7 to 12.7GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 30.
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