TIM1112-15L Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 42.0d Bm at 11.7GHz to 12.7GHz ･HIGH GAIN G1d B= 6.0d B at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45d Bc at Pout= 30.0d Bm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 9V IDSset= 4.0A f = 11.7 to 12.7GHz UNIT d Bm d B A d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 30.0d Bm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d...