TIM1112-4UL Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 36.5d Bm at 11.7GHz to 12.7GHz ･HIGH GAIN G1d B= 9.5d B at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45d Bc at Pout= 24.0d Bm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current SYMBOL CONDITIONS P1d B G1d B IDS1 VDS= 10V IDSset= 1.0A f=11.7 to 12.7 GHz UNIT d Bm d B Gain Flatness G d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 24.0d Bm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d...