TIM1213-18L Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 42.5d Bm at 12.7GHz to 13.2GHz ･HIGH GAIN G1d B= 6.0d B at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28d Bc at Pout= 36.0d Bm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 10V IDSset= 4.4A f = 12.7 to 13.2GHz UNIT d Bm d B A d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 36.0d Bm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d...