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TIM1213-30L - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet Details

Part number TIM1213-30L
Manufacturer Toshiba
File Size 344.15 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1213-30L Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.0A f= 12.7 to 13.
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