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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1213-2L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 1.0A f= 12.7 to 13.2GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 22.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150
MIN. 32.5 6.5 -42
TYP. MAX.
33.
TIM1213-2L Datasheet
