TIM1213-2L Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 33.5d Bm at 12.7GHz to 13.2GHz ･HIGH GAIN G1d B= 7.5d B at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current SYMBOL CONDITIONS P1d B G1d B IDS1 VDS= 9V IDSset= 1.0A f= 12.7 to 13.2GHz UNIT d Bm d B Gain Flatness G d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 22.0d Bm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d B) X...