TIM1414-2 Description
TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band).
TIM1414-2 Key Features
- High power
- P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
- Broadband internally matched
- Hermetically sealed package RF Performance Specifications (Ta = 25°C)
- 14.5 GHz A % °C
- 0.85 23
- 60 Condition Unit dBm dB Min. 32.5 5.5 Typ. 33.5 6.5 Max
- Typ. 600 -3.5 2.0