TIM1414-2 Datasheet Microwave Power Gaas Fet

Manufacturer: Toshiba

Overview: .. TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X,.

Datasheet Details

High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz.
High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz.
Broadband internally matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efﬁciency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % °C.