TIM1414-2 Datasheet | Toshiba

.. TOSHIBA MICROWAVE POWER Ga As FET Internally Matched Power Ga As FETs (X, Ku-Band) Features - High power - P1d B = 33.5 d Bm at 14.0 GHz to 14.5 GHz - High gain - G1d B = 6.5 d B at 14.0 GHz to 14.5 GHz - Broadband internally matched - Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1d B G1d B IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % °C - - - 0.85 23 - 1.1 - 60 Condition Unit d Bm d B Min. 32.5 5.5 Typ. 33.5 6.5 Max - - Data Shee Electrical Characteristics (Ta = 25°C) Characteristic Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) . Condition VDS = 3V IDS = 1.0A VDS = 3V IDS = 30 m A VDS = 3V VGS = 0V IGS = -30 µA Channel to Case Unit m S V A V °C/W Min. - -2 - -5 - Typ. 600 -3.5 2.0 - 5 Max. - -5 2.6 - 6 . The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, munication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, bustion control, all types of safety devices, etc.). TOSHIBA cannot...