Datasheet4U Logo Datasheet4U.com

TIM6472-4UL - MICROWAVE POWER GaAs FET

Features

  • ･BROAD BAND.

📥 Download Datasheet

Datasheet preview – TIM6472-4UL

📁 Similar Datasheet

  • TIM6472-12UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM6472-30SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM6472-35SL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM6472-8UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM-LC - GPS Receiver (uBlox)
  • TIM-LH - GPS Receiver Module (uBlox)
  • TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 0.9A f = 6.4 to 7.2GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 25.5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150 Ω MIN. 35.5 8.5    -44   TYP. MAX. 36.
Published: |