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TIM7785-8SL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM7785-8SL
Manufacturer Toshiba
File Size 319.66 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM7785-8SL Datasheet
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 2.2A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 28.
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