TIM8596-8 Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 4.0A f = 8.5 to 9.6GHz UNIT dBm dB Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) °C Remended Gate Resistance(Rg): 100  MIN. 38.5 5.0    TYP. MAX.     ELECTRICAL CHARACTERISTICS (...