TK100F06K3 - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK100F06K3
Manufacturer	Toshiba
File Size	380.48 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK100F06K3 Datasheet
Additional preview pages of the TK100F06K3 datasheet.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ. ) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ. ) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK100F06K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2020-06-12 Rev.2.0 TK100F.

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Published: Nov 11, 2013 |