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TK28V65W5 - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.115 Ω (typ. ) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28V65W5 DFN8x8 1: Gate 2: Source 1 3,4: Source 2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source 2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

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Datasheet Details

Part number TK28V65W5
Manufacturer Toshiba
File Size 281.45 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK28V65W5 Datasheet
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MOSFETs Silicon N-Channel MOS (DTMOS) TK28V65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.115 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28V65W5 DFN8x8 1: Gate 2: Source 1 3,4: Source 2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source 2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 27.
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