The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TMD1925-3 TMD1925-3
Preliminary
Suitable for Digital Communications
Low Intermodulation Distortion
High Power P1dB=34dBm(min) @1.9 to 2.5GHz High Gain G1dB=27dB(min)@1.9 to 2.5GHz
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER STORAGE TEMPERATURE
( Ta= 25°C )
SYMBOL VDD VGG Pin Tstg UNIT V V dB °C RATINGS 15 -4 13 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Input Return Loss Output Return Loss 3rd Order Intermodulation Distortion IDD IM3 G1dB SYMBOL f P1dB
( Ta= 25°C)
CONDITION UNIT GHz dBm VDD=10V IDDset=1.
TMD1925-3 Datasheet
