TMD1925-3 Datasheet | Toshiba

FEATURES TMD1925-3 TMD1925-3 Preliminary - - Suitable for Digital munications Low Intermodulation Distortion - - High Power P1d B=34d Bm(min) @1.9 to 2.5GHz High Gain G1d B=27d B(min)@1.9 to 2.5GHz ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER STORAGE TEMPERATURE ( Ta= 25°C ) SYMBOL VDD VGG Pin Tstg UNIT V V d B °C RATINGS 15 -4 13 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Operating Frequency Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Input Return Loss Output Return Loss 3rd Order Intermodulation Distortion IDD   IM3 G1d B SYMBOL f P1d B ( Ta= 25°C) CONDITION UNIT GHz d Bm VDD=10V IDDset=1.2A @ P1d B Small Level NOTE MIN. 1.9 34.0 27.0  10   TYP.  35.0 29.0 1.6  10 -52 MAX. 2.5   1.9    d B A d B d B d Bc Signal NOTE: Two Tone Test,Po=17d Bm(Single Carrier Level) ELECTRICAL CHARACTERISTICS ( Ta= 25°C) CHARACTERISTICS Thermal Resistance ‹ SYMBOL Rth (c-c) CONDITION Channel to Case UNIT °C/W MIN  TYP 6 MAX 6.5 ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised Nov.2001 -1- TMD1925-3 TMD1925-3 Package Outline (2-9E1H) Unit in...