TMD5872-2 Datasheet | Toshiba

FEATURES n n High Power P1d B=34d Bm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n PRELIMINARY High Gain G1d B=28d B(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V d Bm o C o C RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operaing Frequency Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) G IDD ηadd VSWRin d B A % 1.2 21 2.0:1 ±2.0 SYMBOL f P1d B CONDITION UNIT GHz d Bm MIN. 5.8 32 25 TYP. 34 28 MAX. 7.2 - VDD=10V G1d B VGG=-5V d B 1.6 3.0:1 u u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised July. 1999 1 TMD5872-2 Package Outline Unit in mm - „…†‰Š: No Connection ƒ: RF Input ‚: VGG ‡: VDD ˆ: RF Output 11pin: Orientation Tab Remended Bias Configuration 7: VDD 3p F 1 - 3 p F TMD5872-2 1 - 3 p F 1,000p F 10-50 u F 10-50 u F 2 : VGG 1,000p F 3p F GND : Base...