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TMD5872-2-321 - Microwave Power MMIC Amplifier

Key Features

  • n n n Suitable for VSAT, UNII radio.

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Datasheet Details

Part number TMD5872-2-321
Manufacturer Toshiba
File Size 113.20 KB
Description Microwave Power MMIC Amplifier
Datasheet download datasheet TMD5872-2-321 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2-321 High Gain G1dB=26.7dB(MIN.) Broadband Operation f=5.8-6.475GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) ∆G IDD ηadd VSWRin dB A % 1.2 21 2.0:1 +/- 2.