TMD3438-1 Datasheet | Toshiba

FEATURES n n Suitable for WLL Suscriber/CPE High Power P1d B=29d Bm(min) n n High Gain G1d B=29d B(min) High Linearity ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Total Power Dissipation Flange Temperature Storage Temperature SYMBOL VDD VGG Pin PT Tf Tstg UNIT V V d Bm W o C o C RATINGS 10 -10 10 6 -40 ~ +85 -65 ~ +150 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operating Frequency Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Noise Figure Drain Current Input Return Loss Output Return Loss NF IDD   @ Pin=-6d Bm Small Level Signal d B m A d B d B   10 10 8.0 500   9.0 550   G1d B SYMBOL f P1d B VDD=7.5V VGG=-5.0V d B 29.0   CONDITION UNIT GHz d Bm MIN. 3.4 29.0 TYP.   MAX. 3.8  u u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. March, 00e 1 .. Package Outline Unit in mm Pin2 : VDD1 Pin3 : RF Input Pin4 : No Connection Pin5 : VGG Pin14 : No Connection Pin15: RF Output Pin16: No Connection Pin17: VDD2 Others : GND - - The backside of Package has to be grounded by soldering. .. Remended Bias Configuration Substrate Thickness: Dielectric Constant: Thickness of Metalizaion: 0.6mm 5.0 1oz RC Mounting Remendation The backside of this package has to be grounded by soldering. The poor soldering will cause the electrical and thermal performance degradation. Toshiba remends following reflow soldering profile. Temp (deg C) Ramp rate 6deg...