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MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES n n Suitable for WLL Suscriber/CPE High Power P1dB=29dBm(min) n n
TMD3438-1
High Gain
G1dB=29dB(min)
High Linearity
ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Total Power Dissipation Flange Temperature Storage Temperature SYMBOL VDD VGG Pin PT Tf Tstg UNIT V V dBm W
oC oC
RATINGS 10 -10 10 6 -40 ~ +85 -65 ~ +150
RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Noise Figure Drain Current Input Return Loss Output Return Loss NF IDD @ Pin=-6dBm Small Level Signal dB mA dB dB 10 10 8.0 500 9.
TMD3438-1 Datasheet
