TPC8404
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel π-MOSV/N Channel π-MOSV)
Motor Dreive Switching Regulator Applications
Unit: mm
- Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
- High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.)
N Channel |Yfs| = 1.3 S (typ.)
- Low leakage current:
- Enhancement-mode
P Channel IDSS=- 100μA (VDS =
- 250V) N Channel IDSS = 100 μA (VDS = 250V)
: P Channel Vth =
- 1.5~- 3.5 V (VDS =
- 10 V, ID =
- 1 m A) : N Channel Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Rating Symbol P Channel N Channel Unit
Drain-source voltage
VDSS
- 250
Drain-gate voltage (RGS = 20 kΩ)
VDGR
- 250
Gate-source voltage
VGSS
±20
±20
DC Drain current
Pulse
(Note 1) ID
- 0.9
(Note 1) IDP
- 3.9
Drain power dissipation
Single-device operation (Note...
