Datasheet Summary
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Built-in schottky barrier diode Low forward voltage: VDSF =
- 0.6 V (max)
- High-speed switching
- Small gate charge: QSW = 8.4 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 54 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1...