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TPCA8057-H - Silicon N-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 14 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPCA8057-H SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2010-04 1 2014-03-04 Rev.2.0 TPCA8057-H 4. A.

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Datasheet Details

Part number TPCA8057-H
Manufacturer Toshiba
File Size 281.99 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCA8057-H Datasheet

Full PDF Text Transcription for TPCA8057-H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8057-H. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8057-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint d...

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rs • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 14 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPCA8057-H SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2010-04 1 2014-03-04 Rev.2.0 TPCA8057-H 4.