TPCA8087 - Field Effect Transistor

Toshiba

Key Features

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 1.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

TPCA8087 field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCA8087
Manufacturer	Toshiba
File Size	283.88 KB
Description	Field Effect Transistor
Datasheet	TPCA8087 Datasheet

Full PDF Text Transcription for TPCA8087 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8087. For precise diagrams, and layout, please refer to the original PDF.

TPCA8087 MOSFETs Silicon N-Channel MOS (U-MOS) TPCA8087 1. Applications • • Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and t...

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dsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 1.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.

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