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TPCA8A04-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8A04-H
0.5 ± 0.1
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
• • • • • • • Built-in a schottky barrier diode
6.0 ± 0.3
Unit: mm
0.4 ± 0.1 5
8
1.27
0.05 M A
5.0 ± 0.2
Low forward voltage: VDSF = −0.6 V (max) High-speed switching Small gate charge: QSW = 13.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 127 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15 ± 0.05
0.95 ± 0.05
1
4
0.595 0.166 ± 0.05 A
5.0 ± 0.2
S 0.6 ± 0.1
1
4
4.25 ± 0.
TPCA8A04-H Datasheet
