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TPCA8A10-H - Field Effect Transistor

Key Features

  • (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-19 Rev.1.0 Free Datasheet http://www. datasheet4u. com.

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Datasheet Details

Part number TPCA8A10-H
Manufacturer Toshiba
File Size 279.60 KB
Description Field Effect Transistor
Datasheet download datasheet TPCA8A10-H Datasheet

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Full PDF Text Transcription (Reference)

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TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-19 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPCA8A10-H 4.