• Part: TPH1R005PL
  • Description: Silicon N-channel MOSFET
  • Manufacturer: Toshiba
  • Size: 632.67 KB
Download TPH1R005PL Datasheet PDF
TPH1R005PL page 2
Page 2
TPH1R005PL page 3
Page 3

Datasheet Summary

MOSFETs Silicon N-channel MOS (U-MOS-H) 1. Applications - High-Efficiency DC-DC Converters - Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.) (3) Small output charge: Qoss = 98 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please...