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TPH1R005PL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ. ) (3) Small output charge: Qoss = 98 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1R005PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected acc.

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Datasheet Details

Part number TPH1R005PL
Manufacturer Toshiba
File Size 632.67 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH1R005PL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R005PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.) (3) Small output charge: Qoss = 98 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1R005PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative.