TPH1R204PB - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TPH1R204PB
Manufacturer	Toshiba
File Size	511.38 KB
Description	Silicon N-channel MOSFET
Datasheet	TPH1R204PB Datasheet
Additional preview pages of the TPH1R204PB datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ. ) (3) Small output charge: Qoss = 56 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.85 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R204PB SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pro.

📁 Similar Datasheet

TPH100A - Current Transducers (Topstek)
TPH10A-LTC - Current Transducers (Topstek)
TPH12.5A-LTC - Current Transducers (Topstek)
TPH1205D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH1205DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH1205S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH1209D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH1209DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

Published: Feb 28, 2025 |