• Part: TPH1R306P1
  • Description: Silicon N-channel MOSFET
  • Manufacturer: Toshiba
  • Size: 581.18 KB
Download TPH1R306P1 Datasheet PDF
TPH1R306P1 page 2
Page 2
TPH1R306P1 page 3
Page 3

Datasheet Summary

MOSFETs Silicon N-channel MOS (U-MOS-H) 1. Applications - High-Efficiency DC-DC Converters - Switching Voltage Regulators - Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.96 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2017-12 2019-10-18...