TPH3R003PL
TPH3R003PL is Silicon N-channel MOSFET manufactured by Toshiba.
Features
(1) High-speed switching (2) Small gate charge: QSW = 13 n C (typ.) (3) Small output charge: Qoss = 24 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 m A)
3. Packaging and Internal Circuit
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-07
2016-10-19 Rev.1.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
(Note 1)
VGSS
±20
Drain current (DC)
( Tc = 25 )
(Note 2)
88 A
Drain current (DC)
( Silicon limit ) (Note 2), (Note 3)
Drain current (pulsed)
( t = 100 µs )
(Note 2)
Power dissipation
( Tc = 25 )
PD 90 W
Power dissipation
(Note 4)
Power...
