TPH3R70APL
TPH3R70APL is Silicon N-channel MOSFET manufactured by Toshiba.
Features
(1) High-speed switching (2) Small gate charge: QSW = 21 n C (typ.) (3) Small output charge: Qoss = 74 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance(N)
The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative.
©2017-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2017-10
2019-10-17 Rev.4.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 1)
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
Drain current (pulsed)
(t = 100 µs)
(Note 1)
Power dissipation
(Tc = 25 )
Power dissipation
(Note...
