TPH3R203NL Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 5.2 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 m A) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) 84 A Drain current (DC) (Tc = 25 ) (Note 1) Drain current (pulsed) (t = 1 ms) (Note 1) Power dissipation (Tc = 25 ) PD 44 W Power dissipation (t = 10 s) (Note 3) Power dissipation (t = 10 s) (Note 4) Single-pulse avalanche energy (Note...