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XPN12006NC - Silicon N-Channel MOSFET

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Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPN12006NC TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-12 2020-06-24 Rev.4.0 XPN12006NC 4. Absolute M.

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Datasheet Details

Part number XPN12006NC
Manufacturer Toshiba
File Size 560.33 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS-H) XPN12006NC 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPN12006NC TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-12 2020-06-24 Rev.4.0 XPN12006NC 4.
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