Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Automotive
- Switching Voltage Regulators
- DC-DC Converters
- Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
TSON Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-10
2023-08-23 Rev.1.0
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