Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS- -H)
1. Applications
- Automotive
- Motor Drivers
- Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 11.2 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TSON Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2020
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2020-12
2020-11-05 Rev.2.0
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